DPG30C300PC datasheet(1/3 Pages) IXYS

부품명	DPG30C300PC

상세설명	High Performance Fast Recovery Diode

PDF	3 Pages

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제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

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1 / 3 page

DPG 30 C 200 HB

advanced

ns

HiPerFRED

Symbol

Definition

R a t i n g s

Features / Advantages:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

typ.

max.

I

FSM

I

R

A

V

150

IFAV

A

V

F

1.25

RthJC

1.70 K/W

V

R =

1

2

3

min.

15

t = 10 ms

Applications:

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

VRRM

V

200

1

T

VJ

V°C

=

T

VJ

°C

=mA

0.08

Package:

Part number

V

R =

T

VJ =°C

I

F

=A

V

TC = 140°C

rectangular, d = 0.5

P

tot

90

W

TC

°C

=

T

VJ

175

°C

-55

V

I

RRM

FAV

=

200

15

T

VJ =45°C

DPG 30 C 200 HB

V

A

200

V

200

25

max. repetitive reverse voltage

reverse current

forward voltage

average forward current

thermal resistance junction to case

virtual junction temperature

total power dissipation

max. forward surge current

Conditions

Unit

1.50

TVJ

°C

=25

C

J

tbd

pF

junction capacitance

V=

V;

100

T

150

V

F0

V

0.69

T

VJ = 175°C

rF

17.3

Ω

f = 1 MHz

=

°C

25

m

V

1.00

TVJ =°C

IF =A

V

15

150

1.27

I

F

=A

30

IF =A

30

2x

threshold voltage

slope resistance

for power loss calculation only

Backside: cathode

3A

T

VJ =°C

reverse recovery time

A

tbd

35

tbd

ns

(50 Hz), sine

t

rr

=

35 ns

● Housing:

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Common Cathode

TO-247

●rIndustry standard outline

●rEpoxy meets UL 94V-0

●rRoHS compliant

R

VJ

I

RM

max. reverse recovery current

IF =A;

20

25

T=

°C

VJ

-diF

=A/µs

200

/dt

t

rr

VR =

V

100

TVJ =°C

25

T=

°C

VJ

µA

IXYS reserves the right to change limits, conditions and dimensions.

0629

Data according to IEC 60747and per diode unless otherwise specified

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DPG30C300PC 데이터시트(PDF) 1 Page - IXYS Corporation

DPG30C300PC 데이터시트(HTML) 1 Page - IXYS Corporation

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