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STM32F101X4 데이터시트(PDF) 46 Page - STMicroelectronics |
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STM32F101X4 데이터시트(HTML) 46 Page - STMicroelectronics |
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46 / 79 page ![]() Electrical characteristics STM32F101x4, STM32F101x6 46/79 Doc ID 15058 Rev 5 Figure 21. Typical application with a 32.768 kHz crystal 5.3.7 Internal clock source characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 8. High-speed internal (HSI) RC oscillator ai14129b OSC32_OU T OSC32_IN fLSE CL1 RF STM32F10xxx 32.768 KH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 23. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz DuCy(HSI) Duty cycle 45 55 % ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 1(3) 3. Guaranteed by design, not tested in production. % Factory- calibrated(4) 4. Based on characterization, not tested in production. TA = –40 to 105 °C –2 2.5 % TA = –10 to 85 °C –1.5 2.2 % TA = 0 to 70 °C –1.3 2 % TA = 25 °C –1.1 1.8 % tsu(HSI) (4) HSI oscillator startup time 12 µs IDD(HSI) (4) HSI oscillator power consumption 80 100 µA |
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