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LPC81XM 데이터시트(PDF) 53 Page - NXP Semiconductors

부품명 LPC81XM
상세설명  32-bit ARM Cortex-M0 microcontroller; up to 16 kB flash and 4 kB SRAM
PDF  71 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC81XM 데이터시트(HTML) 53 Page - NXP Semiconductors

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LPC81xM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 29 July 2013
53 of 71
NXP Semiconductors
LPC81xM
32-bit ARM Cortex-M0+ microcontroller
13. Analog characteristics
13.1 BOD
[1]
Interrupt levels are selected by writing the level value to the BOD control register BODCTRL.
[2]
Typical ratings are not guaranteed. The values listed are for room temperature (25
C), V
DD = 3.3 V, typical
samples.
13.2 Internal voltage reference
[1]
Characterized through simulation.
[2]
Characterized on a typical silicon sample.
Table 19.
BOD static characteristics[1]
Tamb =-40 C to +105 C.
Symbol
Parameter
Conditions
Typ[2]
Unit
Vth
threshold voltage
interrupt level 1
assertion
2.3
V
de-assertion
2.4
V
interrupt level 2
assertion
2.6
V
de-assertion
2.7
V
interrupt level 3
assertion
2.8
V
de-assertion
2.9
V
reset level 1
assertion
2.1
V
de-assertion
2.2
V
reset level 2
assertion
2.4
V
de-assertion
2.5
V
reset level 3
assertion
2.6
V
de-assertion
2.8
V
Table 20.
Internal voltage reference static and dynamic characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VO
output voltage
Tamb = 40 C to +105 C
[1] 0.855
0.900
0.945
V
Tamb = 70 C to 105 C
[2] -0.906
-
V
Tamb = 50 C
[2] -0.905
-
V
Tamb = 25 C
[4] 0.893
0.903
0.913
V
Tamb = 0 C
[2] -0.902
-
V
Tamb = 20 C
[2] -0.899
-
V
Tamb = 40 C
[2] -0.896
-
V
ts(pu)
power-up
settling time
to 99% of VO
[3] -
155
195
s



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