DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120305

KBPC8005 THRU KBPC810

TECHNICAL SPECIFICATIONS

OF SINGLE-PHASE SILICON

BRIDGE RECTIFIER

VOLTAGE RANGE-50 to1000 Volts

CURRENT-8.0 Amperes

FEATURES

•Surge overload rating: 125 Amperes peak

•Low forward voltage drop

•High temperature soldering : 260

•Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MECHANICAL DATA

•Case: Molded plastic

•Epoxy: UL 94V-0 rate flame retardant

•Lead: MIL-STD-202, Method 208 guaranteed

•Polarity: Symbols molded or marked on body

•Mounting position: Any

•Weight: 6.9 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

•Ratings at 25°C ambient temperature unless otherwise specified

•Single phase, half wave, 60Hz, resistive or inductive load.

•For capacitive load derate current by 20%

SYMBOLS

KBPC

8005

KBPC

801

KBPC

802

KBPC

804

KBPC

806

KBPC

808

KBPC

810

UNIT

Maximum Repetitive Peak Reverse Voltage

VRRM

50

100

200

400

600

800

1000

Volts

Maximum RMS Voltage

VRMS

35

70

140

280

420

560

700

Volts

Maximum DC Blocking Voltage

VDC

50

100

200

400

600

800

1000

Volts

Maximum Average Forward Rectified Output

Current at TC = 50℃

IO

8.0

Amps

Peak Forward Surge Current

8.3ms single half sine - wave superimposed on

rated load (JEDEC method )

IFSM

125

Amps

Maximum Forward Voltage Drop per element at 4.0A DC

VF

1.1

Volts

@TA = 25℃

5.0

Maximum DC Reverse Current at Rate

DC Blocking Voltage per element

@TC =100℃

IR

500

μAmps

I2t Rating for Fusing(t<8.3ms)

I2t

166

A2Sec

Typical Junction Capacitance (Note1)

CJ

200

pF

Typical Thermal Resistance (Note2)

RθJC

21

℃/W

Operating Temperature Range

TJ

-55 to +150

℃

Storage Temperature Range

TSTG

-55 to +150

℃

NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5x0.5”(13x13mm)copper pads.

BR-10 Unit:inch(mm)

0

30

6

4