MRF8372R2 datasheet(2/6 Pages) MOTOROLA

부품명	MRF8372R2

상세설명	RF LOW POWER TRANSISTOR NPN SILICON

PDF	6 Pages

Scroll/Zoom	100%

제조업체	MOTOROLA [Motorola, Inc]

홈페이지	http://www.freescale.com

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2 / 6 page

MRF8372R1, R2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

V(BR)CEO

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, VBE = 0)

V(BR)CES

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

4.0

—

Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

ICES

—

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

hFE

200

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

1.8

2.5

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

Gpe

8.0

—

Collector Efficiency

(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

—

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