MJ901 datasheet(2/3 Pages) COMSET

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MJ900 – MJ901 PNP

29/10/2012

COMSET SEMICONDUCTORS

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ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC=-100 mA, IB=0

MJ900

-60

MJ901

-80

ICEO

Collector Cutoff Current

VCE=-30 V, IB=0

MJ900

-500

µA

VCE=-40 V, IB=0

MJ901

IEBO

Emitter Cutoff Current

VBE=-5.0 V, IC=0

MJ900

-2.0

MJ901

ICER

Collector-Emitter Leakage

Current

VCB=-60 V, RBE=1.0 kΩ MJ900

-1.0

VCB=-80 V, RBE=1.0 kΩ MJ901

VCB=-60 V, RBE=1.0 kΩ

TC=150°C

MJ900

-5.0

VCB=-80 V, RBE=1.0 kΩ

TC=150°C

MJ901

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=-3.0 A, IB=-2 mA

MJ900

-2.0

MJ901

IC=-8.0 A, IB=-40 mA

MJ900

-4.0

MJ901

Forward Voltage (pulse

method)

IF=-3 A

MJ900

-1.8

MJ901

VBE

Base-Emitter Voltage (*)

IC=-3.0 A, VCE=-3.0V

MJ900

-2.5

MJ901

HFE

DC Current Gain (*)

VCE=-3.0 V, IC=-3.0 A

MJ900

1000

MJ901

VCE=-3.0 V, IC=-4.0 A

MJ900

750

MJ901

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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