MJ3000 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP MJ3000 – MJ3001

29/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

BVCEO

Collector-Emitter Breakdown

Voltage (*)

IC=100mA

IB=0

MJ3000

MJ3001

ICEO

Collector Cutoff Current

VCE=30 V

IB=0

MJ3000

1.0

VCE=40 V

IB=0

MJ3001

IEBO

Emitter Cutoff Current

VBE=5.0 V

IC=0

MJ3000

2.0

MJ3001

ICER

Collector-Emitter

Leakage Current

VCB=60 V

RBE=1.0 kΩ

MJ3000

1.0

VCB=80 V

RBE=1.0 kΩ

MJ3001

VCB=60 V

RBE=1.0 kΩ

TC=150°C

MJ3000

5.0

VCB=80 V

RBE=1.0 kΩ

TC=150°C

MJ3001

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=5.0 A

IB=20 mA

MJ3000

2.0

MJ3001

IC=10 A

IB=50 mA

MJ3000

4.0

MJ3001

VBE

Base-Emitter Voltage (*)

IC=5.0 A

VCE=3.0V

MJ3000

MJ3001

hFE

DC Current Gain (*)

VCE=3.0 V

IC=5.0 A

MJ3000

1000

MJ3001

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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