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INA6002AC1 데이터시트(PDF) 1 Page - Isahaya Electronics Corporation

부품명 INA6002AC1
상세설명  FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
PDF  3 Pages
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제조업체  ISAHAYA [Isahaya Electronics Corporation]
홈페이지  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

INA6002AC1 데이터시트(HTML) 1 Page - Isahaya Electronics Corporation

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Notice : This is not a final specification.
Some parametric subject to change.
<SMALL-SIGNAL TRANSISTOR>
INA6002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
DESCLIPTION
INA6002AC1 is a silicon PNP epitaxial type transistor.
It is designed with high voltage.
FEATURE
・Super mini package for easy mounting.
・Hige voltage VCEO=-300V
APPLICATION
DC/DC convertor, High voltage switching
OUTLINE DRAWING
Unit:mm
MAXIMUM RATINGS (Ta=25℃)
Symbol
Parameter
Ratings
Unit
MARKING
VCBO
Collector-Base Voltage
-300
V
VEBO
Emitter-Base Voltage
-7
V
VCEO
Collector-Emitter Voltage
-300
V
IC
Collector Current
-50
mA
PC
Collector Dissipation
150
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55∼+150
℃
ELECTRIC CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
V(BR)CBO
Collector-Base Breakdown Voltage
IC=-50µA,IE=0
-300
-
-
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=-50µA,IC=0
-7
-
-
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-1mA,RBE=∞
-300
-
-
V
ICBO
Collector Cutoff Current
VCB=-300V,IE=0
-
-
-0.5
µA
IEBO
Emitter Cutoff Current
VEB=-5V,IC=0
-
-
-0.5
µA
hFE
DC Forward Current Gain
VCE=-10V,IC=-1mA
50
-
305
-
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-10mA,IB=-1mA
-
-
-1.0
V
fT
Gain Bandwidth Product
VCE=-6V,IE=10mA
-
50
-
MHz
Cob
Collector Output Capacitance
VCB=-6V,IE=0,f=1MHz
-
2.6
-
pF
3 W
JEITA:SC-59
JEDEC:Similar toTO-236
2.8
0.65
1.5
0.65
(1)
(2)
(3)
TERMINAL CONNECTER
(1) BASE
(2) EMITTER
(3) COLLECTOR


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