TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,

TIC246S

30/10/2012

COMSET SEMICONDUCTORS

1 | 3

SEMICONDUCTORS

SILICON BIDIRECTIONAL TRIODE THYRISTOR

• High current triacs

• 16 A RMS

• 70 A Peak

• Glass Passivated Wafer

• 200 V to 800 V Off-State Voltage

• 125 A peak current

• Compliance to ROHS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to

the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

B

C

D

E

M

S

N

Repetitive peak off-state voltage

(see Note1)

200 300 400 500 600 700 800

V

Full-cycle RMS on-state current at

(or below) 70°C case temperature

(see note2)

16

A

Peak on-state surge current

full-sine-wave (see Note3)

125

A

Peak gate current

± 1

A

Operating case temperature range

-40 to +110

°C

Storage temperature range

-40 to +125

°C

Lead temperature 1.6 mm from

case for 10 seconds

230

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Junction to case thermal resistance

≤ 1.9

°C/W

Junction to free air thermal resistance

≤ 62.5