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MIC5166 데이터시트(PDF) 2 Page - Micrel Semiconductor

부품명 MIC5166
상세설명  3A High-Speed Low VIN DDR Terminator
PDF  25 Pages
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제조업체  MICREL [Micrel Semiconductor]
홈페이지  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC5166 데이터시트(HTML) 2 Page - Micrel Semiconductor

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Micrel, Inc.
MIC5166
June 2012
2
M9999-060612-A
Ordering Information
Part Number
Output Voltage
Junction Temperature Range
(1)
Package
Lead Finish
MIC5166YML
½VDDQ
–40
°C to +125°C
10-Pin 3mm
× 3mm MLF®
Pb-Free
Note:
1.
MLF
® is a GREEN RoHS-compliant package. Lead finish is NiPdAu. Mold compound is Halogen Free..
Pin Configuration
10-Pin 3mm
× 3mm MLF® (ML)
Pin Description
Pin Number
Pin Name
Description
1
VREF
Reference Voltage. This output provides an output of the internal reference voltage VDDQ/2. The VREF
output is used to provide the reference voltage for the memory chip. Connect a 1.0µF capacitor to
ground at this pin. This pin can sink and source 10mA.
2
BIAS
BIAS Supply Voltage. The BIAS supply is the power MOSFET gate drive supply voltage and the
supply bus for the IC. The BIAS voltage must be greater than (VTT + 2.2V). A 1.0µF ceramic capacitor
from the BIAS pin to PGND
must be placed next to the IC.
3
AGND
Analog Ground. Internal signal ground for all low-power circuits.
4
VDDQ
Input Supply. VDDQ is connected to an internal precision divider which provides the VREF. Connect a
4.7µF capacitor to ground at this pin.
5
PG
Power Good. This is an open drain output that indicates when the output voltage is within ±10% of the
reference voltage. The PG flag is asserted typically with 65µs delay when the enable is set low or
when the output goes outside ±10% the window threshold.
6
SNS
Feedback. Input to the error amplifier.
7
EN
Enable. Logic level control of the output. Logic HIGH enables the MIC5166 and a logic LOW shuts
down the MIC5166. In the off state, supply current of the device is greatly reduced (typically 0.2µA).
The EN pin should not be left open.
8
PGND
Power Ground. Internal ground connection to the source of the internal, low-side drive, N-channel
MOSFET.
9
VTT
Power Output. This is the connection to the source of the internal high-side N-channel MOSFET and
drain of the low-side N-channel MOSFET. This is a high-frequency, high-power connection, therefore
two 10µF output capacitors must be placed as close to the IC as possible.
10
VIN
High-Side N-Channel MOSFET Drain Connection. The VIN operating voltage range is from 0.9V to
3.6V. An input capacitor between the VIN pin and the PGND is required as close to the chip as
possible.
EP
ePad
Exposed Pad. Must be connected to a GND plane for best thermal performance.



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