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DF02S-E3/45. 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 DF02S-E3/45.
상세설명  Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers
PDF  4 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
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DF02S-E3/45. 데이터시트(HTML) 1 Page - Vishay Siliconix

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DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
1
Document Number: 88573
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material
categorization:
For
definitions
of
compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads
Note
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
PRIMARY CHARACTERISTICS
Package
DFS
IF(AV)
1 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
50 A
IR
5 μA
VF at IF = 1.0 A
1.1 V
TJ max.
150 °C
Diode variations
Quad
~
~
Case Style DFS
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
DF005S
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
UNIT
Device marking code
DF005S
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward output rectified current
at TA = 40 °C (1)
IF(AV)
1.0
A
Peak forward surge current single half sine-wave
superimposed on rated load
IFSM
50
A
Rating for fusing (t < 8.3 ms)
I2t10
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Maximum instantaneous forward
voltage drop per diode
1.0 A
VF
1.1
V
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C
500
Typical junction capacitance per
diode (1)
CJ
25
pF


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