LED55BF datasheet(2/4 Pages) FAIRCHILD

2 / 4 page

www.fairchildsemi.com

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6/05/01

DS300313

NOTE:

1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.

2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.

3. RMA flux is recommended.

4. Methanol or isopropyl alcohols are recommended as cleaning agents.

5. Soldering iron tip 1/16” (1.6mm) minimum from housing.

6. As long as leads are not under any stress or spring tension

7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians.

Parameter

Symbol

Rating

Unit

Operating Temperature

TOPR

-65 to +125

°C

Storage Temperature

TSTG

-65 to +150

°C

Soldering Temperature (Iron)(3,4,5 and 6)

TSOL-I

240 for 5 sec

°C

Soldering Temperature (Flow)(3,4 and 6)

TSOL-F

260 for 10 sec

°C

Continuous Forward Current

100

Forward Current (pw, 1µs; 200Hz)

Reverse Voltage

Power Dissipation (TA = 25°C)(1)

170

Power Dissipation (TC = 25°C)(2)

1.3

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

Peak Emission Wavelength

IF = 100 mA

—

940

—

Emission Angle at 1/2 Power

—

±40

—

Deg.

Forward Voltage

IF = 100 mA

—

1.7

Reverse Leakage Current

VR = 3 V

—

µA

Total Power LED55BF(7)

IF = 100 mA

3.5

—

Total Power LED55CF(7)

IF = 100 mA

5.4

—

Total Power LED56F(7)

IF = 100 mA

1.5

—

Rise Time 0-90% of output

—

1.0

—

µs

Fall Time 100-10% of output

—

1.0

—

µs

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)

GaAs INFRARED EMITTING DIODE

LED55BF

LED55CF

LED56F

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