NXP Semiconductors

PMPB48EP

30 V, single P-channel Trench MOSFET

PMPB48EP

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Product data sheet

10 September 2012

7 / 14

0

-25

-20

-10

-15

-5

017aaa775

0.06

0.12

0.18

(Ω)

0

-3.2 V

-3.3 V

-3.4 V

-3.5 V

-3.6 V

-4 V

-4.5 V

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

017aaa776

0

-12

-8

-4

100

150

50

200

250

(mΩ)

0

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

0

-5

-4

-2

-3

-1

017aaa777

-8

-16

-24

(A)

0

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

017aaa778

1.0

1.4

1.8

a

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values