| 전자부품 데이터시트 검색엔진 |
|
BCR8LM-12LAB00 데이터시트(PDF) 2 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
BCR8LM-12LAB00 데이터시트(HTML) 2 Page - Renesas Technology Corp |
|
2 / 7 page ![]() BCR8LM-12LA Preliminary R07DS0683EJ0100 Rev.1.00 Page 2 of 6 Feb 25, 2013 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125 C, VDRM applied On-state voltage VTM — — 1.6 V Tc = 25 C, ITM = 12 A, instantaneous measurement Holding current IH — 10 — mA Tj = 25 C, VD = 12 V, RGT1 =∞ VFGT — — 1.5 V VRGT — — 1.5 V Gate trigger voltage Note2 VRGT — — 1.5 V Tj = 25 C, VD = 6 V, RL = 6 , RG = 330 IFGT — — 10 mA IRGT — — 10 mA Gate trigger current Note2 IRGT — — 10 mA Tj = 25 C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage VGD 0.2 — — V Tj = 125 C, VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 4.3 C/W Junction to case Note3 Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it is advisable that heatsink is electrically floating. |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |