2

Symbol

Parameter

Units

Absolute Maximum

Vdd1

Device Voltage

V

5.5

Vdd2

Device Voltage

V

5.5

Idd1

Q1 Drain Current

mA

90

W

1.19

CW RF Input Power

dBm

20

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Thermal Resistance

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. This is limited by maximum Vd and Id. Board

derate the device power at 25 mW per °C rise

in board temperature adjacent to package

bottom.

3. Thermal resistance measured using Infra-

Red Microscopy Technique.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Idd1

Current at Q1

mA

40

53

68

Idd2

Current at Q2

mA

96

116

138

NF

Noise Figure

dB

–

0.76

1.1

Gain

Gain

dB

33

34.3

36.3

Output Third Order Intercept Point

dBm

37

41.8

–

OP1dB

Output Power at 1 dB Gain Compression

dBm

22.1

23.5

–

IRL

Input Return Loss, 50

: source

dB

–

-19.5

–

ORL

Output Return Loss, 50

: load

dB

–

-10.5

–

|S12|

Reverse Isolation

dB

–

50

–

Isolation between Output pin to Input pin

dB

–

50.3

–

Notes:

1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded

from the measurement.

3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.