| 전자부품 데이터시트 검색엔진 |
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EPC2TC32 데이터시트(PDF) 19 Page - Altera Corporation |
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EPC2TC32 데이터시트(HTML) 19 Page - Altera Corporation |
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19 / 26 page ![]() Operating Conditions Page 19 Configuration Devices for SRAM-Based LUT Devices January 2012 Altera Corporation Operating Conditions Table 12 through Table 19 list information about absolute maximum ratings, recommended operating conditions, DC operating conditions, and capacitance for configuration devices. Table 12. Absolute Maximum Ratings (1) Symbol Parameter Conditions Min Max Unit VCC Supply voltage With respect to GND (2) –2.0 7.0 V VI DC input voltage With respect to GND (2) –2.0 7.0 V IMAX DC VCC or GND current — — 50 mA IOUT DC output current, per pin — –25 25 mA PD Power dissipation — — 250 mW TSTG Storage temperature No bias –65 150 ° C TAMB Ambient temperature Under bias –65 135 ° C TJ Junction temperature Under bias — 135 ° C Table 13. Recommended Operating Conditions Symbol Parameter Conditions Min Max Unit VCC Supply voltage for 5.0-V operation (3), (4) 4.75 (4.50) 5.25 (5.50) V Supply voltage for 3.3-V operation (3), (4) 3.0 (3.0) 3.6 (3.6) V VI Input voltage With respect to GND –0.3 VCC + 0.3 (5) V VO Output voltage — 0 VCC V TA Operating temperature For commercial use 0 70 ° C For industrial use –40 85 ° C tR Input rise time — — 20 ns tF Input fall time — — 20 ns Table 14. DC Operating Conditions Symbol Parameter Conditions Min Max Unit VIH High-level input voltage — 2.0 VCC + 0.3 (5) V VIL Low-level input voltage — –0.3 0.8 V VOH 5.0-V mode high-level TTL output voltage IOH = –4 mA DC (6) 2.4 — V 3.3-V mode high-level CMOS output voltage IOH = –0.1 mA DC (6) VCC – 0.2 — V VOL Low-level output voltage IOL = 4 mA DC (6) —0.4 V II Input leakage current VI = VCC or GND –10 10 A IOZ Tri-state output off-state current VO = VCC or GND –10 10 A |
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