MGA-635P8 datasheet(2/14 Pages) AVAGO

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Absolute Maximum Rating [1] TA=25°C

Symbol

Parameter

Units

Absolute Maximum

Vdd

Device Voltage,

RF output to ground

5.5

Vbias

Gate Voltage

0.7

Pin,max

CW RF Input Power

(Vdd = 5.0V, Id = 50 mA)

dBm

+20

Pdiss

Total Power Dissipation [2]

0.5

Junction Temperature

°C

150

Tstg

Storage Temperature

°C

-65 to 150

Thermal Resistance

Thermal Resistance [3]

(Vdd = 5.0V, Idd = 50mA)

jc = 75°C/W

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Power dissipation with device turned on.

Board temperature TB is 25°C. Derate at

13mW/°C for TB>112°C.

3. Thermal resistance measured using Infra-Red

Measurement Technique

Electrical Specifications [1], [4]

RF performance at TA = 25°C, Vdd = 5V, Rbias = 3.6 kOhm, 2.5 GHz, measured on demo board in Figure 1 with component

listed in Table 1 for 2.5 GHz matching.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Idd

Drain Current

Gain

16.5

19.5

OIP3 [2]

Output Third Order Intercept Point

dBm

32.5

35.9

NF [3]

Noise Figure

0.56

0.78

OP1dB

Output Power at 1dB Gain Compression

dBm

IRL

Input Return Loss, 50

 source

12.5

ORL

Output Return Loss, 50

 load

REV ISOL

Reverse Isolation

Notes:

1. Measurements at 2.5 GHz obtained using demo board described in Figure 1.

2. OIP3 test condition: FRF1 = 2.5 GHz, FRF2 = 2.501 GHz with input power of -10dBm per tone.

3. For NF data, board losses of the input have not been de-embedded.

4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application

note for more details.

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