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SSM2212RZ-R7 데이터시트(PDF) 4 Page - Analog Devices |
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SSM2212RZ-R7 데이터시트(HTML) 4 Page - Analog Devices |
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4 / 12 page ![]() SSM2212 Rev. B | Page 4 of 12 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Breakdown Voltage of Collector-to-Base Voltage (BVCBO) 40 V Breakdown Voltage of Collector-to-Emitter Voltage (BVCEO) 40 V Breakdown Voltage of Collector-to-Collector Voltage (BVCC) 40 V Breakdown Voltage of Emitter-to-Emitter Voltage (BVEE) 40 V Collector Current (IC) 20 mA Emitter Current (IE) 20 mA Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C Junction Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 3. Thermal Resistance Package Type θJA θJC Unit 8-Lead SOIC (R-8) 120 45 °C/W ESD CAUTION |
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