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PC81103NIP0F 데이터시트(PDF) 9 Page - Sharp Corporation |
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PC81103NIP0F 데이터시트(HTML) 9 Page - Sharp Corporation |
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9 / 14 page ![]() Sheet No.: D2-A03802EN ■ Design Considerations While operating at IF<5.0mA, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. The collector-emitter voltage has negative resistance characteristics since this device has built-in base-emit- ter resistor. Therefore, please be careful not to provide the voltage that goes beyond absolute maximum ratings. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Recommended Foot Print (reference) ✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes. 9 2.2 8.2 (Unit : mm) ● Design guide PC8110xNSZ0F Series |
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