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2SC4536 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SC4536 데이터시트(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page ![]() Data Sheet PU10338EJ01V0DS 2 2SC4536 ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 20 V, IE = 0 mA – – 5.0 µA Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA – – 5.0 µA DC Current Gain hFE Note 1 VCE = 10 V, IC = 50 mA 60 – 200 – RF Characteristics Insertion Power Gain S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz 5.5 7.2 – dB Noise Figure (1) NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 – dB Noise Figure (2) NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 – dB 2nd Order Intermoduration Distortion IM2 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω, VO = 105 dB µV/75 Ω, f1 = 190 MHz, f2 = 90 MHz, f = f1 − f2 – 59.0 – dBc 3rd Order Intermoduration Distortion IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω, VO = 105 dB µV/75 Ω, f1 = 190 MHz, f2 = 200 MHz, f = 2 × f1 − f2 – 82.0 – dBc Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. RS = RL = 50 Ω, tuned hFE CLASSIFICATION Rank QR QS Marking QR QS hFE Value 60 to 120 100 to 200 |
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