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TIP33C 데이터시트(PDF) 4 Page - ON Semiconductor |
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TIP33C 데이터시트(HTML) 4 Page - ON Semiconductor |
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4 / 6 page ![]() TIP33A, TIP33C http://onsemi.com 4 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (A) 0.1 1.0 5.0 10 10 20 100 500 200 50 NPN PNP VCE = 4.0 V TJ = 25°C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 20 1.0 50 100 Figure 2. Maximum Rated Forward Bias Safe Operating Area 1.0 0.1 2.0 SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT 1.0ms dc 300 ms 5.0 3.0 15 10 10ms 0.2 0.5 2.0 3.0 5.0 7.0 30 70 TC = 25°C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 0 80 100 Figure 3. Maximum Rated Forward Bias Safe Operating Area 0 10 15 20 5.0 20 40 L = 200 mH IC/IB ≥ 5.0 VBE(off) = 0 to 5.0 V TC = 100°C TIP33A TIP33C FORWARD BIAS The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during forward bias. The data is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C. REVERSE BIAS The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn−off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode. |
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