NZT651

NPN Current Driver Transistor

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

60

V

Collector-Base Voltage

80

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

4.0

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

*NZT651

Total Device Dissipation

Derate above 25

°C

1.2

9.7

W

mW/

°C

Thermal Resistance, Junction to Ambient

103

°C/W

B

C

C

SOT-223

E

This device is designed for power amplifier, regulator and switching

circuits where speed is important. Sourced from Process 4P.

Discrete POWER & Signal

Technologies

© 1997 Fairchild Semiconductor Corporation