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NZT751 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 NZT751
상세설명  PNP Current Driver Transistor
PDF  3 Pages
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

NZT751 데이터시트(HTML) 2 Page - Fairchild Semiconductor

  NZT751 Datasheet HTML 1Page - Fairchild Semiconductor NZT751 Datasheet HTML 2Page - Fairchild Semiconductor NZT751 Datasheet HTML 3Page - Fairchild Semiconductor  
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Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS*
Symbol
Parameter
Test Conditions
Min
Max
Units
hFE
DC Current Gain
IC = 50 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
75
75
75
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 A, IB = 100 mA
IC = 2.0 A, IB = 200 mA
0.3
0.5
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 A, IB = 100 mA
1.2
V
VBE(on)
Base-Emitter On Voltage
IC = 1.0 A, VCE = 2.0 V
1.0
V
SMALL SIGNAL CHARACTERISTICS
DC Typical Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage
IC = 10 mA, IB = 060V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
µA, I
E = 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
µA, I
C = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 80 V, IE = 0
100
nA
IEBO
Emitter-Cutoff Current
VEB = 4.0 V, IC = 0
0.1
µA
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
75
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Saturation
Voltage vs Collector Current
PP
0.1
1
5
0
0.1
0.2
0.3
0.4
0.5
0.6
I
- COLLECTOR CURRENT (A)
- 40 ºC
25 °C
C
ββ = 10
125 °C
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
10
0
20
40
60
80
100
120
140
I
- COLLECTOR CURRENT (A)
25 °C
C
V
= 5V
CE
125 °C
- 40 °C
PNP Current Driver Transistor
(continued)



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