LM5107

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SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

-0.3V to 18V

HB to HS

−0.3V to 18V

(3)

−5V to 100V

118V

Junction Temperature

-40°C to +150°C

Storage Temperature Range

−55°C to +150°C

2 kV

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under

which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test

conditions, see the Electrical Characteristics .

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally

not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated

= 10V, the negative transients at HS must not exceed -5V.

(4)

The human body model is a 100 pF capacitor discharged through a 1.5k

Ω resistor into each pin. Pin 6 , Pin 7 and Pin 8 are rated at

500V.

Recommended Operating Conditions

8V to 14V

−1V to 100V

HB

HS Slew Rate

< 50 V/ns

Junction Temperature

−40°C to +125°C

(1)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally

not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated

= 10V, the negative transients at HS must not exceed -5V.

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