NCP45521IMNTWGL datasheet(2/10 Pages) ONSEMI

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NCP45520, NCP45521

http://onsemi.com

Table 1. PIN DESCRIPTION

Name

Function

1, 9

VIN

Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9

NCP45520−H & NCP45521−H − Active−high digital input used to turn on the MOSFET, pin

has an internal pull down resistor to GND

NCP45520−L & NCP45521−L − Active−low digital input used to turn on the MOSFET, pin has

an internal pull up resistor to VCC

VCC

Supply voltage to controller (3.0 V − 5.5 V)

GND

Controller ground

BLEED

Load bleed connection, must be tied to VOUT either directly or through a resistor ≤ 1 kW

NCP45520 − Active−high, open−drain output that indicates when the gate of the MOSFET is

fully charged, external pull up resistor ≥ 1 kW to an external voltage source required; tie to

GND if not used

NCP45521 − Slew rate adjustment; float if not used

7, 8

VOUT

Source of MOSFET connected to load

Table 2. ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Supply Voltage Range

VCC

−0.3 to 6

Input Voltage Range

VIN

−0.3 to 18

Output Voltage Range

VOUT

−0.3 to 18

EN Digital Input Range

VEN

−0.3 to (VCC + 0.3)

PG Output Voltage Range (Note 1)

VPG

−0.3 to 6

Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)

RθJA

40.0

°C/W

Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)

RθJA

72.7

°C/W

Thermal Resistance, Junction−to−Case (VIN Paddle)

RθJC

5.3

°C/W

Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4)

IMAX

10.5

Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4)

IMAX

7.8

Total Power Dissipation @ TA = 25°C (Note 2)

Derate above TA = 25°C

2.50

24.9

mW/°C

Total Power Dissipation @ TA = 25°C (Note 3)

Derate above TA = 25°C

1.37

13.8

mW/°C

Storage Temperature Range

TSTG

−40 to 150

°C

Lead Temperature, Soldering (10 sec.)

TSLD

260

°C

ESD Capability, Human Body Model (Notes 5 and 6)

ESDHBM

3.0

ESD Capability, Machine Model (Note 5)

ESDMM

200

ESD Capability, Charged Device Model (Note 5)

ESDCDM

1.0

Latch−up Current Immunity (Notes 5 and 6)

100

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. NCP45520 only. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source.

2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.

4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably.

5. Tested by the following methods @ TA = 25°C:

ESD Human Body Model tested per JESD22−A114

ESD Machine Model tested per JESD22−A115

ESD Charged Device Model tested per JESD22−C101

Latch−up Current tested per JESD78

6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance

for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.

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