AO7417_13 datasheet(2/4 Pages) AOSMD

2 / 4 page

AO7417

Symbol

Min

Typ

Max

Units

BVDSS

-20

VDS=-20V,VGS=0V

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

Gate Threshold Voltage

-0.5

-0.65

-1

ID(ON)

-20

TJ=125°C

110

100

Ω

100

125

Ω

115

150

Ω

gFS

VSD

-0.7

-1

Ciss

560

745

Coss

Crss

Ω

8.5

Qgs

1.2

Qgd

2.1

7.2

Total Gate Charge

VGS=-4.5V, VDS=-10V, ID=-2A

Gate Source Charge

IS=-1A,VGS=0V

VDS=-5V, ID=-2A

VGS=-1.8V, ID=-1.5A

VGS=-2.5V, ID=-1.8A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

RDS(ON)

Static Drain-Source On-Resistance

VGS=-1.5V, ID=-0.5A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Zero Gate Voltage Drain Current

Ω

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-4.5V, VDS=-5V

VGS=-4.5V, ID=-2A

Reverse Transfer Capacitance

VGS=0V, VDS=-10V, f=1MHz

SWITCHING PARAMETERS

VDS=VGS ID=-250µA

VDS=0V, VGS=±8V

Gate-Body leakage current

Forward Transconductance

Gate Drain Charge

Diode Forward Voltage

tD(on)

7.2

tD(off)

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Fall Time

Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V, RL=5Ω,

RGEN=6Ω

Body Diode Reverse Recovery Time

IF=-2A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 300

µs pulse width, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev.1. 0: March 2013

www.aosmd.com

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