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LM1877 데이터시트(PDF) 2 Page - Texas Instruments |
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LM1877 데이터시트(HTML) 2 Page - Texas Instruments |
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2 / 14 page ![]() LM1877 SNAS550B – FEBRUARY 1995 – REVISED APRIL 2013 www.ti.com Equivalent Schematic Diagram These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage 26V Input Voltage ±0.7V Operating Temperature 0°C to +70°C Storage Temperature −65°C to +150°C Junction Temperature 150°C Lead Temperature PDIP Package Soldering (10 sec.) 260°C SOIC Package Infrared (15 sec.) 220°C SOIC Package Vapor Phase (60 sec.) 215°C Thermal Resistance θJC (PDIP Package) 30°C/W θJA (PDIP Package) 79°C/W θJC (SOIC Package) 27°C/W θJA (SOIC Package) 114°C/W (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. 2 Submit Documentation Feedback Copyright © 1995–2013, Texas Instruments Incorporated Product Folder Links: LM1877 |
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