AT45DB021E datasheet(13/68 Pages) ETC2

13 / 68 page

AT45DB021E

8789E–DFLASH–10/2013

Table 6-1.

Block Erase Addressing

6.8

Sector Erase

The Sector Erase command can be used to individually erase any sector in the main memory.

The main memory array is comprised of nine sectors, and only one sector can be erased at a time. To perform an erase

of Sector 0a or Sector 0b with the standard DataFlash page size (264 bytes), an opcode of 7Ch must be clocked into the

device followed by three address bytes comprised of five dummy bits, seven page address bits (PA9 - PA3), and

12 dummy bits. To perform a Sector 1-7 erase, an opcode of 7Ch must be clocked into the device followed by three

address bytes comprised of five dummy bits, three page address bits (PA9 - PA7), and 16 dummy bits.

To perform a Sector 0a or Sector 0b erase with the binary page size (256 bytes), an opcode of 7Ch must be clocked into

the device followed by three address bytes comprised of six dummy bits, seven page address bits (A17 - A11), and

11 dummy bits. To perform a Sector 1-7 erase, an opcode of 7Ch must be clocked into the device followed by six dummy

bits, three page address bits (A17 - A15), and 15 dummy bits.

The page address bits are used to specify any valid address location within the sector is to be erased. When a

low-to-high transition occurs on the CS pin, the device will erase the selected sector. The erase operation is internally

self-timed and should take place in a maximum time of tSE. During this time, the RDY/BUSY bit in the Status Register will

indicate that the device is busy.

The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If

an erase error arises, it will be indicated by the EPE bit in the Status Register.

PA9/A17 PA8/A16 PA7/A15 PA6/A14 PA5/A13 PA4/A12

PA3/A11

PA2/A10

PA1/A9

PA0/A8

Block

•

124

125

126

127

AT45DB021E 데이터시트(PDF) 13 Page - List of Unclassifed Manufacturers