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STB18NF25 데이터시트(PDF) 1 Page - STMicroelectronics |
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STB18NF25 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. April 2012 Doc ID 16785 Rev 3 1/18 18 STB18NF25, STD18NF25 N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages Datasheet — production data ■ Low gate charge ■ 100% avalanche tested ■ Exceptional dv/dt capability Application ■ Switching applications – Automotive Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC- DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Figure 1. Internal schematic diagram Features Type VDSS RDS(on) max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W DPAK D²PAK 1 3 TAB 1 3 TAB Table 1. Device summary Order codes Marking Package Packaging STB18NF25 18NF25 D²PAK Tape and reel STD18NF25 18NF25 DPAK Tape and reel www.st.com |
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