CPDVR083V3U datasheet(2/5 Pages) COMCHIP

2 / 5 page

Page 2

Comchip Technology CO., LTD.

±20

ESD

IPP

PPP

°C

-55 to +125

Operating temperature

ESD per IEC 61000-4-2(Air)

Peak pulse current

( tp = 8/20 us)

Peak pulse power ( tp = 8/20 us)

Parameter

Symbol

Value

Unit

Maximum Ratings (at TA=25°C unless otherwise noted)

ESD per IEC 61000-4-2(Contact)

Storage temperature

TSTG

±15

°C

3.3

VPT

VRWM

Punch-through voltage

Reverse stand-off voltage

Parameter

Conditions

Symbol Min Typ Max Unit

IPT = 2uA

Electrical Characteristics (at TA=25°C unless otherwise noted)

Snap-back voltage

ISB = 50mA

VSB

Leakage current

VR = 3.3V

2.8

Clamping voltage

IPP

Any Channel Pin to Ground

= 1 A, Tp=8/20us,

0.5

0.05

3.5

5.5

IPP

Any Channel Pin to Ground

= 5 A, Tp=8/20us,

8.0

IPPR

Ground to Any Channel Pin

= 1 A, Tp=8/20us,

VCR

2.4

Reverse clamping voltage

Junction capacitance

Any Channel Pin to Ground

= 0 V, f = 1MHz

VR = 3.3 V, f = 1MHz

Any Channel Pin to Ground

REV:B

QW-BP027

SMD ESD Protection Diode

CPDVR083V3U 데이터시트(PDF) 2 Page - Comchip Technology

CPDVR083V3U 데이터시트(HTML) 2 Page - Comchip Technology

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL