MTP1306

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.25

0.75

1.25

1.5

2.0

0

75

125

150

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

20

40

80

0

0.001

0.003

0.005

0.007

20

40

90

0.004

0.005

0.006

0.007

0.008

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

–50

0

0.5

2.0

10

15

20

25

30

10

100

1000

10,000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

–25

0

25

50

75

100

125

150

TJ = 25°C

VDS ≥ 10 V

TJ = –55°C

TJ = 100°C

TJ = 25°C

50

100

0.5

1.0

1.75

25

VGS = 10 V

0

60

160

180

40

140

20

2.0

2.5

3.0

3.5

4.0

4.5

0.006

0.004

0.002

60

100

140

60

80

100

1.5

VGS = 10 V

ID = 38 A

1.0

5.0

TJ = 125°C

100

°C

0.008

0.009

0.010

0.009

5.0 V

4.0 V

120

100

80

125

°C

25

°C

120

25

°C

–55

°C

30

50

70

150

120

140

130

110

VGS = 5.0 V

10 V

VGS ≥ 10 V