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TLP281 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TLP281
상세설명  PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA)
PDF  8 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP281 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TLP281,TLP281-4
2010-08-27
3
Absolute Maximum Ratings (Ta = 25°C)
RATING
CHARACTERISTIC
SYMBOL
TLP281
TLP281−4
UNIT
Forward Current
IF
50
mA
Forward Current Derating
∆IF /°C
−0.7 (Ta≥53°C)
−0.5 (Ta≥25°C)
mA /°C
Pulse Forward Current (Note 1)
IFP
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Collector Power Dissipation
(1 Circuit)
PC
150
100
mW
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
∆PC /°C
−1.5
−1.0
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
−55 to 100
°C
Storage Temperature Range
Tstg
−55 to 125
°C
Lead Soldering Temperature
Tsol
260 (10s)
°C
Total Package Power Dissipation
(1 Circuit)
PT
200
170
mW
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
∆PT /°C
−2.0
−1.7
mW /°C
Isolation Voltage
(Note 2)
BVS
2500(AC,1min,R.H.≤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width ≤ 100μs, frequency 100Hz
(Note 2) AC, 1 minute, R.H.≤60%,Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse Current
IR
VR = 5 V
—
—
10
μA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Collector-Emitter
Breakdown Voltage
V(BR) CEO
IC = 0.5 mA
80
—
—
V
Emitter-Collector
Breakdown Voltage
V(BR) ECO
IE = 0.1 mA
7
—
—
V
VCE = 48 V,
Ambient Light Below
(100 ℓx)
(Note 4)
—
0.01
(2)
0.1
(10)
μA
Collector Dark Current
(Note 3)
ICEO
VCE = 48 V, Ta = 85°C
Ambient Light Below
(100 ℓx)
(Note 4)
—
2
(4)
50
(50)
μA
Capacitance
(Collector to Emitter)
CCE
V = 0, f = 1 MHz
—
10
—
pF
(Note 3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
(Note 4)Irradiation to marking side using standard light bulb.



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