TLP700

2010-02-23

1

Unit in mm

Weight: 0.26 g (t yp.)

4.58±0.25

9.7±0.3

0.4±0.1

1.27±0.2

1.25±0.25

7.62±0.25

1 2 3

6 5 4

11-5J1

TOSHIBA

11-5J1

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC

TLP700

Industrial inverters

Inverter for air conditioners

IGBT/Power MOSFET gate drive

TLP700 consists of a GaAℓAs light-emitting diode and an integrated

photodetector.

This unit is 6-lead SDIP package. The TLP700 is 50% smaller than the 8-pin

DIP and meets the reinforced insulation class requirements of international safety

standards. Therefore the mounting area can be reduced in equipment requiring

safety standard certification.

The TLP700 is suitable for gate driving circuits for IGBTs or power MOSFETs.

In particular, the TLP700 is capable of “direct” gate driving of low-power IGBTs.

• Peak output current:

±2.0 A (max)

• Guaranteed performance over temperature: −40 to 100°C

• Supply current:

2 mA (max)

• Power supply voltage:

15 to 30 V

• Threshold input current:

500 ns (max)

• Common mode transient immunity:

±15 kV/μs (min)

• Isolation voltage:

5000 Vrms (min)

• Construction mechanical rating

7.62-mm pitch

standard type

10.16-mm pitch

TLPXXXF type

Creepage Distance

Clearance

Insulation Thickness

7.0 mm (min)

7.0 mm (min)

0.4 mm (min)

8.0 mm (min)

8.0 mm (min)

0.4 mm (min)

•

UL recognized:

UL1577, File No. E67349

•

Option (D4) type

TÜV approved:

EN60747-5-2

Highest permissible over voltage:

( Note ) When a EN60747-5-2 approved type is needed,

please designate the “Option(D4)”

Truth Table

Input

LED

M1

M2

Output

H

ON

ON

OFF

H

L

OFF

OFF

ON

L

1: ANODE

2: N.C

3: CATHODE

4: GND

1

3

4

5

6

2

SHIELD

A 0.1-

μF bypass capacitor must be connected

between pins 6 and 4. (See Note 6.)

Schematic

GND

(M1)

(M2)

1＋

4

5

6

3－

SHIELD