2SC5108

2010-02-17

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5108

For VCO Application

Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

10

V

Emitter-base voltage

3

V

Base current

15

mA

Collector current

30

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)