© Semiconductor Components Industries, LLC, 2012

November, 2012 − Rev. 15

1

Publication Order Number:

BAS19LT1/D

BAS19L, NSVBAS19L,

BAS20L, SBAS20L, BAS21L,

SBAS21L, BAS21DW5,

SBAS21DW5

High Voltage

Switching Diode

Features

Compliant

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

BAS19, NSVBAS19

BAS20, SBAS20

BAS21, SBAS21

120

200

250

Vdc

Repetitive Peak Reverse Voltage

BAS19, NSVBAS19

BAS20, SBAS20

BAS21, SBAS21

120

200

250

Vdc

Continuous Forward Current

200

mAdc

Peak Forward Surge Current

625

mAdc

Junction and Storage Temperature

Range

−55 to

+150

°C

Power Dissipation (Note 1)

385

mW

Electrostatic Discharge

ESD

HM < 500

MM < 400

V

V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

HIGH VOLTAGE

SWITCHING DIODE

5

CATHODE

1

ANODE

MARKING DIAGRAMS

http://onsemi.com

3

CATHODE

1

ANODE

4

CATHODE

3

ANODE

SOT−23 (TO−236)

CASE 318

STYLE 8

SC−88A (SOT−353)

CASE 419A

SOT−23

SC−88A

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

1

2

3

1

Jx M G

G

x

= P, R, or S

P

= BAS19L, NSVBAS19L

R

= BAS20L, SBAS20L

S

= BAS21L, SBAS21L or

BAS21DW5, SBAS21DW5

M

= Date Code

G

= Pb−Free Package

2

3

Jx M G

G

1

3

3

2

1

4

5

*Date Code orientation and/or overbar may vary

depending upon the manufacturing location.

(Note: Microdot may be in either location)