SBAS20L datasheet(2/6 Pages) ONSEMI

2 / 6 page

BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,

SBAS21DW5

http://onsemi.com

THERMAL CHARACTERISTICS (SOT−23)

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 2)

TA = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance

Junction−to−Ambient (SOT−23)

RqJA

556

°C/W

Total Device Dissipation Alumina Substrate

(Note 3)

TA = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SC−88A)

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 4)

385

Thermal Resistance −

Junction−to−Ambient

Derate Above 25°C

RqJA

328

3.0

°C/W

mW/°C

Maximum Junction Temperature

TJmax

150

°C

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

2. FR−5 = 1.0

0.75

0.062 in.

3. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.

4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

(VR = 100 Vdc)

BAS19, NSVBAS19

(VR = 150 Vdc)

BAS20, SBAS20

(VR = 200 Vdc)

BAS21, SBAS21

(VR = 100 Vdc, TJ = 150°C)

BAS19

(VR = 150 Vdc, TJ = 150°C)

BAS20, SBAS20

(VR = 200 Vdc, TJ = 150°C)

BAS21, SBAS21

−

0.1

100

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

BAS19, NSVBAS19

(IBR = 100 mAdc)

BAS20, SBAS20

(IBR = 100 mAdc)

BAS21, SBAS21

V(BR)

120

200

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

−

1.0

1.25

Vdc

Diode Capacitance (VR = 0, f = 1.0 MHz)

−

5.0

Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)

trr

−

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