| 전자부품 데이터시트 검색엔진 |
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ALD1108EDC 데이터시트(PDF) 4 Page - Advanced Linear Devices |
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ALD1108EDC 데이터시트(HTML) 4 Page - Advanced Linear Devices |
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4 / 10 page ![]() ALD1108E/ALD1110E Advanced Linear Devices 4 PROGRAMMING CHARACTERISTICS TA = 25°C V+ = +5.0V unless otherwise specified ALD1108E ALD1110E Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Programmable Vt Range Vt 1.000 3.000 1.000 3.000 V Resolution of V t Programming RV t 0.1 1 0.1 1 mV Change in Vt Per ∆Vt / N 0.5 0.5 mV/ pulse Vt = 1.0V Programming Pulse 0.05 0.05 Vt = 2.5V Programming Voltage Vp 11.75 12.00 12.25 11.75 12.00 12.25 V Programming Current Ip 2 2 mA Pulse Frequency ƒ pulse 50 50 KHZ Transconductance gm 1.4 1.4 mA/V VD = 10V,VG =Vt + 4.0 Transconductance Match ∆gm 25 25 µA/V VD = 10V,VG =Vt + 4.0 Low Level Output Conductance gOL 66 µA/V VG = Vt +0.5V High Level Output Conductance gOH 68 68 µA/V VG = Vt +4.0V Drain Off Leakage Current ID(OFF) 5 400 5 400 pA 44 nA TA = 125°C Gate Leakage Current IGSS 10 100 10 100 pA 11 nA TA = 125°C Input Capacitance CISS 25 25 pF Cross Talk 60 60 dB f = 100KHz Relaxation Time Constant tRLX 2 2 Hours Relaxation Voltage VRLX -0.3 -0.3 % 1.0V ≤ Vt ≤ 3.0V OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25°C V+ = +5.0V unless otherwise specified ALD1108E ALD1110E Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions |
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