TO-252 datasheet(1/1 Pages) WINNERJOIN

부품명	TO-252

상세설명	TRANSISTOR (PNP)

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WEJ

ELECTRONIC

CO.,LTD

2SB1261-Z TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

2

W (Tamb=25

℃)

Collector current

ICM:

-3

A

Collector-base voltage

V(BR)CBO:

-60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-

100µA, IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-

1mA, IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-7

V

Collector cut-off current

ICBO

VCB=-60V, IE=0

-10

µA

Emitter cut-off current

IEBO

VEB=-7V, IC=0

-10

µA

hFE(1)

VCE=-2V, IC=-200mA

60

hFE(2)

VCE=-2V, IC=-600mA

100

400

DC current gain

hFE(3)

VCE=-2V, IC=-2A

50

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A, IB=-150mA

-0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=-1.5A, IB=-150mA

-1.2

V

Transition frequency

fT

VCE=-5V, IC=-1.5A

120

MHz

Collector output capacitance

Cob

VCB=-1.0V, IE=0, f=1MHz

30

pF

Turn on Time

ton

0.5

Storage Time

tstg

2.0

Switching Time

Fall Time

tf

VCC=-10V, IC=-1A, IB1=-IB2=-0.1A

0.5

µs

CLASSIFICATION OF hFE(1)

Rank

M

L

K

Range

100-200

160-320

200-400

TO-252

1. BASE

2. COLLECTOR

3. EMITTER

1

2 3

2SB1261-Z

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E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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