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PACDN1404CG 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 PACDN1404CG
상세설명  ESD Protection Arrays in Chip Scale Package
PDF  5 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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PACDN1404CG 데이터시트(HTML) 2 Page - ON Semiconductor

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PACDN1404
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PACKAGE / PINOUT DIAGRAMS
Top View
(Bumps Down View)
PACDN1404
6−Bump WLCSP Package
Orientation
Marking
A
B1
B2
B3
A1
A2
A3
D14
+
B
12
3
Bottom View
(Bumps Up View)
Top View
(Bumps Down View)
PACDN1408
10−Bump WLCSP Package
A
B1
B2
B3
A1
A2
A3
DN1408
B
12
3
Bottom View
(Bumps Up View)
B4
B5
A4
A5
Orientation
Marking
+
45
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Rating
Units
Operating Temperature Range
−40 to +85
C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VREV
Reverse Standoff Voltage
IDIODE = 10 mA
5.5
V
ILEAK
Leakage Current
VIN = 3.3 V DC
100
nA
VSIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
ILOAD = 10 mA
5.6
−1.2
6.8
−0.8
8.0
−0.4
V
VESD
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
(Note 2)
30
25
kV
VCL
Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Note 2)
+12
−8
V
C
Channel Capacitance
At 2.5 V DC, f = 1 MHz
39
47
pF
1. TA = 25C unless otherwise specified. GND in this document refers to the lower supply voltage.
2. ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground.



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