MTP52N06V

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VGS = 10 V

9 V

8 V

7 V

6 V

5 V

100

80

60

40

20

0

2

0

7.5

7

5

3

2.5

VDS ≥ 10 V

TJ = – 55°C

100

°C

25

°C

VGS = 10 V

0.035

20

0

0.03

0

40

60

80

100

TJ = 100°C

25

°C

–55

°C

TJ = 25°C

0.023

0.015

5

VGS = 10 V

15 V

VGS = 10 V

ID = 26 A

1.75

1.5

1

0.5

0.25

– 50

– 25

0

25

50

75

100

125

150

VGS = 0 V

TJ = 125°C

1

0

1020

30405060

468

10

100

80

60

40

20

0

24

6

8

0.02

0.015

0.01

0.021

0.019

0.017

25

45

65

85

105

100

10

100

°C

175

2

110

90

70

50

30

10

13

57

9

90

70

50

30

10

110

3.5

4.5

5.5

6.5

0.025

0.005

30

10

50

70

90

110

0.022

0.020

0.018

0.016

15

35

55

75

95

1.25

0.75