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STGF20H60DF 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGF20H60DF
상세설명  600 V, 20 A high speed trench gate field-stop IGBT
PDF  22 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF20H60DF 데이터시트(HTML) 5 Page - STMicroelectronics

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DocID023740 Rev 4
5/22
STGB20H60DF, STGF20H60DF, STGP20H60DF
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
42.5
-
ns
t
r
Current rise time
11.9
-
ns
(di/dt)on
Turn-on current slope
1345
-
A/μs
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
T
J
= 175 °C
42.5
-
ns
t
r
Current rise time
13.4
ns
(di/dt)on
Turn-on current slope
1180
A/μs
t
r(Voff)
Off voltage rise time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
20
-
ns
t
d(off)
Turn-off delay time
177
-
ns
t
f
Current fall time
55
-
ns
t
r(Voff)
Off voltage rise time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
T
J
= 175 °C
26
-
ns
t
d(off)
Turn-off delay time
173
-
ns
t
f
Current fall time
86
-
ns
t
sc
Short-circuit withstand time
V
CC
≤ 360 V, V
GE
= 15 V
3
5
-
μs
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
-
209
-
μJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
261
-
μJ
E
ts
Total switching losses
-
470
-
μJ
Eon
(1)
Turn-on switching losses
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
T
J
= 175 °C
-
480
-
μJ
E
off
(2)
Turn-off switching losses
-
416
-
μJ
E
ts
Total switching losses
-
896
-
μJ



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