DocID024348 Rev 3

5/20

STB13N80K5, STF13N80K5, STP13N80K5

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 22)

-16

-

ns

Rise time

-

16

-

ns

Turn-off delay time

-

42

-

ns

Fall time

-

16

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

14

A

Source-drain current (pulsed)

-

56

A

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 21)

-

406

ns

Reverse recovery charge

-

5.7

µC

Reverse recovery current

-

28

A

Reverse recovery time

di/dt=100 A/µs,

Tj=150 °C

(see Figure 21)

-

600

ns

Reverse recovery charge

-

7.9

µC

Reverse recovery current

-

26

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

30

-

-

V