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MP6900DS 데이터시트(PDF) 2 Page - Monolithic Power Systems |
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MP6900DS 데이터시트(HTML) 2 Page - Monolithic Power Systems |
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2 / 12 page ![]() MP6900- FAST TURN-OFF INTELLIGENT CONTROLLER MP6900 Rev. 1.12 www.MonolithicPower.com 2 9/19/2012 MPS Proprietary Information. Patent Protected. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2012 MPS. All Rights Reserved. ORDERING INFORMATION Part Number Package Top Marking MP6900DJ* TSOT23-5 6D MP6900DS** SOIC-8 MP6900DS MP6900DQ*** QFN6 (3x3mm) 5D * For Tape & Reel, add suffix –Z (e.g. MP6900DJ–Z). For RoHS Compliant Packaging, add suffix –LF (e.g. MP6900DJ–LF–Z) ** For Tape & Reel, add suffix –Z (e.g. MP6900DS–Z). For RoHS Compliant Packaging, add suffix –LF (e.g. MP6900DS–LF–Z) *** For Tape & Reel, add suffix –Z (e.g. MP6900DQ–Z). For RoHS Compliant Packaging, add suffix –LF (e.g. MP6900DQ–LF–Z) PACKAGE REFERENCE TOP VIEW VG VSS VDD 1 2 3 5 4 PGND VD PGND EN NC VD VG NC VDD VSS 1 2 3 4 8 7 6 5 TOP VIEW TSOT23-5 SOIC-8 QFN6 (3x3mm) ABSOLUTE MAXIMUM RATINGS (1) VDD to Vss ......................................-0.3V to +27V PGND to VSs ................................-0.3V to +0.3V VG to VSS ......................................... -0.3V to VCC VD to VSS .....................................-0.7V to +180V EN to VSS .....................................-0.3V to +6.5V Maximum Operating Frequency............. 400kHz Continuous Power Dissipation (TA = +25°C) (2) SOIC8 ...................................................... 1.39W TSOT23-5 ................................................ 0.57W QFN6 (3x3mm) .......................................... 2.5W Junction Temperature...............................150 °C Lead Temperature (Solder).......................260 °C Storage Temperature .............. -55°C to +150 °C Recommended Operation Conditions (3) VDD to Vss ............................................8V to 24V Operating Junction Temp. (TJ).... -40°C to +125°C Thermal Resistance (4) θJA θJC SOIC8..................................... 90 ...... 45... °C/W TSOT23-5.............................. 220 .... 110.. °C/W QFN6 (3x3mm)....................... 50 ...... 12... °C/W Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature. TJ(MAX) the junction-to- ambient thermal resistance θJA and the ambient temperature TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(MAX)=(TJ(MAX)-TA)/ θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. |
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