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AM29F040-120PC 데이터시트(PDF) 13 Page - Advanced Micro Devices

부품명 AM29F040-120PC
상세설명  4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  33 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F040-120PC 데이터시트(HTML) 13 Page - Advanced Micro Devices

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Am29F040
13
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up
and power-down, the Am29F040 locks out write cycles
for VCC < VLKO (see DC Characteristics section for
voltages). When VCC < VLKO, the command register is
disabled, all internal program/erase circuits are
disabled, and the device resets to the read mode. The
Am29F040 ignores all writes until VCC > VLKO. The user
must ensure that the control pins are in the correct logic
state when VCC > VLKO to prevent unintentional writes.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE or
WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL,
CE = VIH or WE = VIH. To initiate a write cycle CE and
WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE = VIL and
OE = VIH will not accept commands on the rising edge
of WE. The internal state machine is automatically
reset to the read mode on power-up.
Sector Protect
Sectors of the Am29F040 may be hardware protected
using programming equipment at the users factory. The
protection circuitry will disable both program and erase
functions for the protected sector(s). Requests to pro-
gram or erase a protected sector will be ignored by the
device.



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