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AM29F400AT 데이터시트(PDF) 32 Page - Advanced Micro Devices

부품명 AM29F400AT
상세설명  4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  35 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F400AT 데이터시트(HTML) 32 Page - Advanced Micro Devices

Back Button AM29F400AT Datasheet HTML 27Page - Advanced Micro Devices AM29F400AT Datasheet HTML 28Page - Advanced Micro Devices AM29F400AT Datasheet HTML 29Page - Advanced Micro Devices AM29F400AT Datasheet HTML 30Page - Advanced Micro Devices AM29F400AT Datasheet HTML 31Page - Advanced Micro Devices AM29F400AT Datasheet HTML 32Page - Advanced Micro Devices AM29F400AT Datasheet HTML 33Page - Advanced Micro Devices AM29F400AT Datasheet HTML 34Page - Advanced Micro Devices AM29F400AT Datasheet HTML 35Page - Advanced Micro Devices  
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Am29F400AT/Am29F400AB
PRELIMINARY
AC CHARACTERISTICS
Write/Erase/Program Operations
Alternate CE Controlled Writes
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
Parameter Symbols
Description
Speed Option (Notes 1 and 2)
Unit
JEDEC
Standard
-65
-70
-90
-120
-150
tAVAV
tWC
Write Cycle Time (Note 2)
Min
60
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
00000
ns
tELAX
tAH
Address Hold Time
Min
45
45
45
50
50
ns
tDVEH
tDS
Data Setup Time
Min
30
30
45
50
50
ns
tEHDX
tDH
Data Hold Time
Min
00000
ns
tOES
Output Enable Setup Time
Min
00000
ns
tOEH
Output Enable
Hold Time
Read (Note 2)
Min
00000
ns
Toggle and Data
Polling (Note 2)
Min
10
10
10
10
10
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
00000
ns
tWLEL
tWS
WE Setup Time
Min
00000
ns
tEHWH
tWH
WE Hold Time
Min
00000
ns
tELEH
tCP
CE Pulse Width
Min
35
35
45
50
50
ns
tEHEL
tCPH
CE Pulse Width High
Min
20
20
20
20
20
ns
tWHWH1
tWHWH1
Programming Operation
Byte
Typ
77777
µs
Word
Typ
1414141414
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
1.0
1.0
1.0
1.0
1.0
sec
Max
88888
sec
tFLQZ
BYTE Switching Low to Output High Z
(Note 2)
Max
20
20
30
30
30
ns



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