AM29F400B datasheet(37/37 Pages) AMD

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Am29F400B

PR ELIMIN A R Y

REVISION SUMMARY

Revision B

Global

Added -55 and -60 speed options, deleted -65 speed

option. Changed data sheet designation from Advance

Information to Preliminary.

Connection Diagrams

Corrected pinouts on all packages: deleted A18.

Table 1, Device Bus Operations

Revised to indicate inputs for both CE# and RESET#

are required for standby mode.

Sector Protection/Unprotection

Corrected text to indicate that these functions can only

be implemented using programming equipment.

Program Command Sequence

Changed to indicate Data# Polling is active for 2 µs

after a program command sequence if the sector spec-

ified is protected.

Sector Erase Command Sequence and DQ3: Sector

Erase Timer

Corrected sector erase timeout to 50 µs.

Erase Suspend Command

Changed to indicate that the device suspends the

erase operation a maximum of 20 µs after the rising

edge of WE#.

DC Characteristics

Changed to indicate VID min and max values are 11.5

to 12.5 V, with a VCC test condition of 5.0 V. Revised ILIT

to 50 µA. Added ICC4 specification. Added typical

values to TTL/NMOS table. Revised CMOS typical

standby current (ICC3).

Figure 14: Chip/Sector Erase Operation Timings;

Figure 19: Alternate CE# Controlled Write

Operation TImings

Corrected hexadecimal values in address and data

waveforms.

AC Characteristics, Erase/Program Operations

Corrected tAH specification for -90 speed option to 45

ns.

Erase and Programming Performance

Corrected word and chip programming times.

Revision C

Global

Formatted for consistency with other 5.0 volt-only data

sheets.

AC Characteristics

Changed tDF and TFLQZ to 15 ns for -55 speed option.

Revision C+1

Table 2, Top Boot Block Sector Address Table

Corrected the sector size for SA10 to 16 Kbytes/8

Kwords.

DC Characteristics—TTL/NMOS Compatible

Deleted Note 4.

Revision C+2

Distinctive Characteristics

Changed minimum 100K write/erase cycles guaran-

teed to 1,000,000.

AC Characteristics

Word/Byte Configuration: Changed tFHQV specification

for 55 ns device.

Erase/Program Operations: Changed tWHWH1 word

mode specification to 12 µs. Corrected the notes refer-

ence for tWHWH1 and tWHWH2. These parameters are

100% tested. Corrected the note reference for tVCS.

This parameter is not 100% tested.

Changed tDS and tCP specifications for 55 ns device.

Alternate CE# Controlled Erase/Program Operations:

Changed tWHWH1 word mode specification to 12 µs.

Corrected the notes reference for tWHWH1 and tWHWH2.

These parameters are 100% tested.

Changed tDS and tCP specifications for 55 ns device.

Temporary Sector Unprotect Table

Added note reference for tVIDR. This parameter is not

100% tested.

Erase and Programming Performance

Changed minimum 100K program and erase cycles

guaranteed to 1,000,000.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash

™ is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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