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AM29SL800B 데이터시트(PDF) 30 Page - Advanced Micro Devices |
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AM29SL800B 데이터시트(HTML) 30 Page - Advanced Micro Devices |
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30 / 41 page ![]() 30 Am29SL800B ADV ANCE I N FO RMAT I O N AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter 170 200 JEDEC Std Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 170 200 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 80 80 ns tDVWH tDS Data Setup Time Min 70 70 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 70 70 ns tWHWL tWPH Write Pulse Width High Min 60 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 10 µs Word Typ 12 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 2 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Min 200 ns |
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