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AM29LV128ML93RPCI 데이터시트(PDF) 57 Page - Advanced Micro Devices

부품명 AM29LV128ML93RPCI
상세설명  128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
PDF  65 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV128ML93RPCI 데이터시트(HTML) 57 Page - Advanced Micro Devices

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September 9, 2003
Am29LV128MH/L
55
DA T A SH EET
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO = VCC. Contact AMD for information on AC operation with VIO
≠ V
CC.
Parameter
Speed Options
JEDEC
Std.
Description
93R
103, 103R
113, 113R 123, 123R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Byte
Typ
7.5
µs
Per Word
Typ
15
µs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
6.25
µs
Per Word
Typ
12.5
µs
Single Byte Word
Program Operation (Note 2, 5)
Byte
Typ
60
µs
Word
Typ
60
µs
Accelerated Single Byte Word
Programming Operation (Note 2, 5)
Byte
Typ
54
µs
Word
Typ
54
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec



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