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VNB20N07 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 VNB20N07
상세설명  FULLY AUTOPROTECTED POWER MOSFET
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNB20N07 데이터시트(HTML) 2 Page - STMicroelectronics

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ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
PowerSO-10
D2PAK
ISOWATT220
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
Vin
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-28
A
Vesd
Electrostatic Discharge (C= 100 pF, R=1.5 K
Ω)
2000
V
Ptot
Total Dissipation at Tc = 25
oC83
34
W
Tj
Operating Junction Temperature
Internally Limited
oC
Tc
Case Operating Temperature
Internally Limited
oC
Tstg
Storage Temperature
-55 to 150
oC
THERMAL DATA
ISOWATT220
PowerSO-10
D2PAK
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.75
62.5
1.5
50
1.5
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCLAMP
Drain-source Clamp
Voltage
ID = 200 mA
Vin = 0
607080
V
VCLTH
Drain-source Clamp
Threshold Voltage
ID = 2 mA
Vin = 0
55
V
VINCL
Input-Source Reverse
Clamp Voltage
Iin = -1 mA
-1
-0.3
V
IDSS
Zero Input Voltage
Drain Current (Vin = 0)
VDS = 13 V
Vin = 0
VDS = 25 V
Vin = 0
50
200
µA
µA
IISS
Supply Current from
Input Pin
VDS = 0 V
Vin = 10 V
250
500
µA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VIN(th)
Input Threshold
Voltage
VDS = Vin
ID + Iin = 1 mA
0.8
3
V
RDS(on)
Static Drain-source On
Resistance
Vin = 10 V
ID = 10 A
Vin = 5 V
ID = 10 A
0.05
0.07
Ω
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS = 13 V
ID = 10 A
13
17
S
Coss
Output Capacitance
VDS = 13 V
f = 1 MHz
Vin = 0
500
800
pF
VNP20N07FI-VNB20N07-VNV20N07
2/13



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