2SC3303 datasheet(1/5 Pages) TOSHIBA

부품명	2SC3303

상세설명	High Current Switching Applications

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SC3303

2010-02-05

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3303

High Current Switching Applications

DC-DC Converter Applications

• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)

• High speed switching time: tstg = 1.0 μs (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

100

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

7

V

DC

IC

5

Collector current

Pulse

ICP

8

A

Base current

IB

1

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

PC

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

유사한 부품 번호 - 2SC3303

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유사한 부품 번호 - 2SC3303

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